NE3509M04-T2-A
RF MOSFET GAAS HJ-FET 2V M04Manufacturer: CEL
Categories: RF FETs, MOSFETs
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The CEL NE3509M04-T2-A is a GaAs HJ-FET RF MOSFET designed for high-frequency applications. This component offers a typical gain of 17.5dB at 2GHz, with a noise figure of 0.4dB, making it suitable for sensitive RF front-end designs. It operates with a test current of 10mA and a test voltage of 2V, supporting a rated voltage of 4V. The device delivers an output power of 11dBm at 2GHz. Its SOT-343F package, identified as M04 by the supplier, is provided in Tape & Reel (TR) for automated assembly. This RF MOSFET is utilized in wireless infrastructure, satellite communications, and radar systems requiring low-noise amplification and high-frequency performance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-343F |
| Current Rating (Amps) | 60mA |
| Frequency | 2GHz |
| Power - Output | 11dBm |
| Gain | 17.5dB |
| Technology | GaAs HJ-FET |
| Noise Figure | 0.4dB |
| Supplier Device Package | M04 |
| Voltage - Rated | 4 V |
| Voltage - Test | 2 V |
| Current - Test | 10 mA |
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