NE3509M04-A
RF MOSFET GAAS HJ-FET 2V M04Manufacturer: CEL
Categories: RF FETs, MOSFETs
Quality Control: Learn More
CEL's NE3509M04-A is a high-performance GaAs HJ-FET RF transistor optimized for demanding wireless applications. This device, supplied in Bulk packaging with the M04 (SOT-343F) package, delivers a typical gain of 17.5 dB at 2 GHz. Operating with a 2V test voltage and 10mA drain current, it exhibits a low noise figure of 0.4dB, making it suitable for sensitive receiver front-ends. The NE3509M04-A is rated for a 4V operating voltage and provides a power output of 11dBm at its test frequency. Its robust design and performance characteristics are well-suited for use in base stations, wireless infrastructure, and satellite communications systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-343F |
| Current Rating (Amps) | 60mA |
| Frequency | 2GHz |
| Power - Output | 11dBm |
| Gain | 17.5dB |
| Technology | GaAs HJ-FET |
| Noise Figure | 0.4dB |
| Supplier Device Package | M04 |
| Voltage - Rated | 4 V |
| Voltage - Test | 2 V |
| Current - Test | 10 mA |
Request a Quote
Clients Also Buy
NE651R479A-A
RF MOSFET GAAS HJ-FET 3.5V 79A
CE3520K3-C1
RF MOSFET PHEMT FET 2V 4MICROX
NE3210S01-T1B
RF MOSFET GAAS HJ-FET 2V SMD
