NE3508M04-T2-A
RF MOSFET GAAS HJ-FET 2V 4TSMMManufacturer: CEL
Categories: RF FETs, MOSFETs
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CEL NE3508M04-T2-A is a GaAs HJ-FET RF MOSFET designed for high-frequency applications. This component operates with a 2V test voltage and a 10mA test current, delivering a gain of 14dB at 2GHz. Its noise figure is a competitive 0.45dB, with an output power rating of 18dBm. The device is supplied in a F4TSMM, M04 (SOT-343F) surface-mount package, offered in tape and reel for automated assembly. The NE3508M04-T2-A is suitable for use in wireless infrastructure, satellite communications, and other demanding RF front-end circuits requiring low noise and high linearity.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-343F |
| Current Rating (Amps) | 120mA |
| Frequency | 2GHz |
| Power - Output | 18dBm |
| Gain | 14dB |
| Technology | GaAs HJ-FET |
| Noise Figure | 0.45dB |
| Supplier Device Package | F4TSMM, M04 |
| Voltage - Rated | 4 V |
| Voltage - Test | 2 V |
| Current - Test | 10 mA |
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