NE3508M04-A
RF MOSFET GAAS HJ-FET 2V 4TSMMManufacturer: CEL
Categories: RF FETs, MOSFETs
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CEL NE3508M04-A is a Gallium Arsenide Heterojunction FET (HJ-FET) designed for high-frequency applications. This RF MOSFET operates at a drain-source voltage of 2V, with a test current of 10mA. It offers a gain of 14dB and a noise figure of 0.45dB at 2GHz, with a power output of 18dBm. The device is housed in a compact F4TSMM (M04) package, equivalent to SOT-343F. Its performance characteristics make it suitable for use in wireless infrastructure, satellite communications, and radar systems. The component is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-343F |
| Current Rating (Amps) | 120mA |
| Frequency | 2GHz |
| Power - Output | 18dBm |
| Gain | 14dB |
| Technology | GaAs HJ-FET |
| Noise Figure | 0.45dB |
| Supplier Device Package | F4TSMM, M04 |
| Voltage - Rated | 4 V |
| Voltage - Test | 2 V |
| Current - Test | 10 mA |
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