NE3503M04-A
RF MOSFET GAAS HJ-FET 2V M04Manufacturer: CEL
Categories: RF FETs, MOSFETs
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CEL NE3503M04-A is a GaAs HJ-FET RF MOSFET designed for high-frequency applications. This component operates with a 2V test voltage and a 10mA test current, delivering a 12dB gain at 12GHz. It features a low noise figure of 0.45dB, making it suitable for applications requiring minimal signal degradation. The device is available in a SOT-343F (M04) package, supplied in bulk. Its robust design supports a rated voltage of 4V and a current rating of 70mA. This RF transistor is utilized in telecommunications and wireless infrastructure sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-343F |
| Current Rating (Amps) | 70mA |
| Frequency | 12GHz |
| Power - Output | - |
| Gain | 12dB |
| Technology | GaAs HJ-FET |
| Noise Figure | 0.45dB |
| Supplier Device Package | M04 |
| Voltage - Rated | 4 V |
| Voltage - Test | 2 V |
| Current - Test | 10 mA |
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