NE350184C
RF MOSFET GAAS HJ-FET 2V 84CManufacturer: CEL
Categories: RF FETs, MOSFETs
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CEL NE350184C, a GaAs HJ-FET RF MOSFET, operates with a test voltage of 2V and a rated voltage of 4V. This component is engineered for high-frequency applications, exhibiting a gain of 13.5dB at 20GHz, with a typical noise figure of 0.7dB. The device is rated for a current of 70mA, with a test current specified at 10mA. Supplied in Bulk packaging, the NE350184C utilizes a Micro-X ceramic package (84C). Its performance characteristics make it suitable for use in telecommunications and radar systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Micro-X ceramic (84C) |
| Current Rating (Amps) | 70mA |
| Frequency | 20GHz |
| Power - Output | - |
| Gain | 13.5dB |
| Technology | GaAs HJ-FET |
| Noise Figure | 0.7dB |
| Supplier Device Package | 84C |
| Voltage - Rated | 4 V |
| Voltage - Test | 2 V |
| Current - Test | 10 mA |
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