NE3210S01-T1B
RF MOSFET GAAS HJ-FET 2V SMDManufacturer: CEL
Categories: RF FETs, MOSFETs
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CEL NE3210S01-T1B is a GaAs HJ-FET RF MOSFET designed for high-frequency applications. This surface-mount device operates with a 2V test voltage and a 4V rated voltage, handling up to 10mA of test current and a current rating of 15mA. Featuring a low noise figure of 0.35dB, it delivers a gain of 13.5dB at its operating frequency of 12GHz. The component is supplied in a tape and reel package, compatible with automated assembly processes. Its performance characteristics make it suitable for use in telecommunications, radar systems, and other demanding RF front-end designs. The device utilizes advanced GaAs HJ-FET technology for optimal performance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-SMD |
| Current Rating (Amps) | 15mA |
| Frequency | 12GHz |
| Power - Output | - |
| Gain | 13.5dB |
| Technology | GaAs HJ-FET |
| Noise Figure | 0.35dB |
| Supplier Device Package | SMD |
| Voltage - Rated | 4 V |
| Voltage - Test | 2 V |
| Current - Test | 10 mA |
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