NE3210S01
RF MOSFET GAAS HJ-FET 2V SMDManufacturer: CEL
Categories: RF FETs, MOSFETs
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The CEL NE3210S01 is a High-Frequency Heterojunction Field-Effect Transistor (HJ-FET) designed for demanding RF applications. This GaAs-based component operates at 2V with a test current of 10mA, delivering a gain of 13.5dB at 12GHz. Its exceptionally low noise figure of 0.35dB makes it suitable for sensitive receiver front-ends. The NE3210S01 is presented in a 4-SMD package, supplied in strip form for efficient assembly. This device is utilized in wireless infrastructure, satellite communications, and military/aerospace systems where high performance and low noise are critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: StripDownload Free CAD Model:
Technical Details:
| Packaging | Strip |
| Package / Case | 4-SMD |
| Current Rating (Amps) | 15mA |
| Frequency | 12GHz |
| Power - Output | - |
| Gain | 13.5dB |
| Technology | GaAs HJ-FET |
| Noise Figure | 0.35dB |
| Supplier Device Package | SMD |
| Voltage - Rated | 4 V |
| Voltage - Test | 2 V |
| Current - Test | 10 mA |
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