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NE25139-T1

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NE25139-T1

RF MOSFET 5V SOT143

Manufacturer: CEL

Categories: RF FETs, MOSFETs

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CEL NE25139-T1 is a high-performance RF MOSFET designed for demanding applications. This dual-gate device operates at 900MHz, delivering a typical gain of 20dB at a test current of 10mA. Featuring a low noise figure of 1.1dB, it is optimized for signal amplification in sensitive RF circuits. The NE25139-T1 is housed in a compact SOT-143 (TO-253-4) package, supplied on tape and reel. Its robust design supports a rated voltage of 13V and a current rating of 40mA, making it suitable for use in wireless communication systems, radio frequency identification (RFID) readers, and other high-frequency electronic equipment.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-253-4, TO-253AA
Current Rating (Amps)40mA
Frequency900MHz
ConfigurationDual Gate
Power - Output-
Gain20dB
TechnologyMOSFET (Metal Oxide)
Noise Figure1.1dB
Supplier Device PackageSOT-143
Voltage - Rated13 V
Voltage - Test5 V
Current - Test10 mA

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