UPA814T-T1
RF TRANS 2 NPN 6V 9GHZ 6SOManufacturer: CEL
Categories: Bipolar RF Transistors
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CEL UPA814T-T1 is a dual NPN bipolar RF transistor designed for high-frequency applications. This surface mount device operates at up to 6V collector-emitter breakdown voltage and features a transition frequency of 9GHz. With a maximum collector current of 100mA and a power dissipation of 200mW, it exhibits a minimum DC current gain of 80 at 3mA, 1V. The typical noise figure is 1.5dB at 2GHz, making it suitable for demanding RF front-end circuitry. Operating at junction temperatures up to 150°C, the UPA814T-T1 is packaged in a 6-SO (6-TSSOP, SC-88, SOT-363) configuration and supplied on tape and reel. This component finds application in wireless communication systems and other high-frequency signal amplification circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 3mA, 1V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1.5dB @ 2GHz |
| Supplier Device Package | 6-SO |
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