UPA812T-A
RF TRANS 2 NPN 10V 7GHZ SOT363Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL UPA812T-A is a dual NPN bipolar RF transistor designed for high-frequency applications. This surface mount device, packaged in a SOT-363 (6-TSSOP, SC-88), offers excellent performance with a collector-emitter breakdown voltage of 10V and a maximum collector current of 65mA. Achieving a transition frequency of 7GHz and a typical gain of 12dB, it is suitable for demanding RF circuitry. The noise figure is a competitive 1.4dB at 1GHz. With a maximum power dissipation of 200mW and an operating temperature up to 150°C, this component is utilized in telecommunications and wireless infrastructure. It exhibits a minimum DC current gain (hFE) of 70 at 7mA and 3V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 150°C (TJ) |
| Gain | 12dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 65mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 7mA, 3V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1.4dB @ 1GHz |
| Supplier Device Package | SOT-363 |
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