UPA810T-T1-A
NPN SILICON AMPLIFIER AND OSCILLManufacturer: CEL
Categories: Bipolar RF Transistors
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The CEL UPA810T-T1-A is a dual NPN silicon RF transistor designed for amplifier and oscillator applications. Featuring a transition frequency of 4.5GHz and a maximum collector current of 100mA, this device offers a typical gain of 9dB and a low noise figure of 1.2dB at 1GHz. With a collector-emitter breakdown voltage of 12V and a maximum power dissipation of 200mW, it is suitable for operation up to 150°C. The transistor is housed in a 6-SuperMiniMold package, a 6-TSSOP, SC-88, or SOT-363 equivalent, and is supplied on a tape and reel. This component finds application in wireless communication systems and other high-frequency circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 150°C (TJ) |
| Gain | 9dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 7mA, 3V |
| Frequency - Transition | 4.5GHz |
| Noise Figure (dB Typ @ f) | 1.2dB @ 1GHz |
| Supplier Device Package | 6-SuperMiniMold |
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