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UPA810T-T1

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UPA810T-T1

RF TRANS 2 NPN 12V 4.5GHZ 6SO

Manufacturer: CEL

Categories: Bipolar RF Transistors

Quality Control: Learn More

CEL UPA810T-T1 is a dual NPN bipolar RF transistor designed for high-frequency applications. This surface-mount component operates with a collector-emitter breakdown voltage of 12V and a maximum collector current of 100mA. It achieves a transition frequency of 4.5GHz and offers a typical gain range of 7dB to 9dB. The noise figure is specified between 1.2dB and 2.5dB at 1GHz. With a maximum power dissipation of 200mW and an operating junction temperature of up to 150°C, the UPA810T-T1 is suitable for demanding RF circuit designs, including wireless communication systems. It is supplied in a 6-SO package, specifically a 6-TSSOP, SC-88, or SOT-363, on tape and reel.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 NPN (Dual)
Operating Temperature150°C (TJ)
Gain7dB ~ 9dB
Power - Max200mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)12V
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 7mA, 3V
Frequency - Transition4.5GHz
Noise Figure (dB Typ @ f)1.2dB ~ 2.5dB @ 1GHz
Supplier Device Package6-SO

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