UPA810T-A
RF TRANS 2 NPN 12V 4.5GHZ SOT363Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL UPA810T-A is a dual NPN bipolar RF transistor designed for high-frequency applications up to 4.5GHz. This surface-mount component, housed in a SOT-363 package, offers a collector current capability of 100mA and a maximum power dissipation of 200mW. Key electrical specifications include a collector-emitter breakdown voltage of 12V, a minimum DC current gain (hFE) of 70 at 7mA and 3V, and a typical gain of 9dB. The noise figure is rated at 1.2dB at 1GHz. This device is suitable for demanding RF circuitry in telecommunications and wireless infrastructure.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 150°C (TJ) |
| Gain | 9dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 7mA, 3V |
| Frequency - Transition | 4.5GHz |
| Noise Figure (dB Typ @ f) | 1.2dB @ 1GHz |
| Supplier Device Package | SOT-363 |
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