UPA806T-T1-A
NPN SILICON AMPLIFIER AND OSCILLManufacturer: CEL
Categories: Bipolar RF Transistors
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The CEL UPA806T-T1-A is a high-frequency NPN silicon amplifier and oscillator transistor. This dual transistor, housed in a 6-SuperMiniMold package, offers a collector-emitter breakdown voltage of 6V and a maximum collector current of 30mA. It features a transition frequency of 12GHz and provides a typical gain of 8.5dB. With a minimum DC current gain (hFE) of 75 at 10mA and 3V, and a noise figure of 1.5dB at 2GHz, this component is designed for demanding RF applications. The surface mount device operates at a maximum power of 200mW and can withstand an operating junction temperature of 150°C. This component finds application in wireless communication systems and signal amplification circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 150°C (TJ) |
| Gain | 8.5dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 10mA, 3V |
| Frequency - Transition | 12GHz |
| Noise Figure (dB Typ @ f) | 1.5dB @ 2GHz |
| Supplier Device Package | 6-SuperMiniMold |
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