UPA806T-T1
RF TRANS 2 NPN 6V 12GHZ 6SOManufacturer: CEL
Categories: Bipolar RF Transistors
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CEL UPA806T-T1 is a dual NPN bipolar RF transistor designed for high-frequency applications. This surface mount component operates with a collector-emitter breakdown voltage of 6V and a maximum collector current of 30mA. It features a transition frequency of 12GHz, making it suitable for RF amplification and switching circuits. The transistor exhibits a minimum DC current gain (hFE) of 75 at 10mA and 3V. Noise figure is typically between 1.5dB and 2.5dB at 2GHz. The device is rated for a maximum power dissipation of 200mW and an operating junction temperature of 150°C. Supplied in a 6-SO package, this component is commonly utilized in wireless communication systems and other RF front-end modules.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 10mA, 3V |
| Frequency - Transition | 12GHz |
| Noise Figure (dB Typ @ f) | 1.5dB ~ 2.5dB @ 2GHz |
| Supplier Device Package | 6-SO |
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