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UPA806T-A

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UPA806T-A

RF TRANS 2 NPN 6V 12GHZ SOT363

Manufacturer: CEL

Categories: Bipolar RF Transistors

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CEL UPA806T-A is a dual NPN bipolar RF transistor designed for high-frequency applications. This surface mount component, housed in a SOT-363 package, features a collector-emitter breakdown voltage of 6V and a maximum collector current of 30mA. With a transition frequency of 12GHz and a typical gain of 8.5dB at 2GHz, it offers excellent performance for RF amplification. The noise figure is rated at 1.5dB typically at 2GHz. Operating up to 150°C junction temperature, this device is suitable for use in wireless communication systems and other high-frequency electronic designs.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 NPN (Dual)
Operating Temperature150°C (TJ)
Gain8.5dB
Power - Max200mW
Current - Collector (Ic) (Max)30mA
Voltage - Collector Emitter Breakdown (Max)6V
DC Current Gain (hFE) (Min) @ Ic, Vce75 @ 10mA, 3V
Frequency - Transition12GHz
Noise Figure (dB Typ @ f)1.5dB @ 2GHz
Supplier Device PackageSOT-363

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