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UPA800T-T1-A

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UPA800T-T1-A

RF TRANS 2 NPN 10V 8GHZ SOT363

Manufacturer: CEL

Categories: Bipolar RF Transistors

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This CEL UPA800T-T1-A is a dual NPN bipolar RF transistor designed for high-frequency applications. It features a 10V collector-emitter breakdown voltage and a maximum collector current of 35mA. With a transition frequency of 8GHz and a minimum DC current gain of 80 at 5mA, 3V, it delivers a typical gain of 7.5dB. The noise figure is 1.9dB at 2GHz, making it suitable for sensitive RF front-end designs. The device is rated for a maximum power dissipation of 200mW and operates at temperatures up to 150°C (TJ). Packaged in a compact SOT-363 (6-TSSOP, SC-88) surface mount configuration, it is supplied on tape and reel. This component is frequently utilized in wireless communication systems, satellite receivers, and other RF front-end circuitry.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 NPN (Dual)
Operating Temperature150°C (TJ)
Gain7.5dB
Power - Max200mW
Current - Collector (Ic) (Max)35mA
Voltage - Collector Emitter Breakdown (Max)10V
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 3V
Frequency - Transition8GHz
Noise Figure (dB Typ @ f)1.9dB @ 2GHz
Supplier Device PackageSOT-363

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