UPA800T-T1
RF TRANS 2 NPN 10V 8GHZ 6SOManufacturer: CEL
Categories: Bipolar RF Transistors
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The CEL UPA800T-T1 is a dual NPN bipolar RF transistor designed for high-frequency applications. This surface mount component operates with a collector-emitter breakdown voltage of 10V and a maximum collector current of 35mA. It exhibits a minimum DC current gain (hFE) of 80 at 5mA and 3V. The device features a transition frequency of 8GHz and a maximum power dissipation of 200mW. Noise figure is specified as 1.9dB to 3.2dB typically at 2GHz. The UPA800T-T1 is housed in a 6-SO package and is supplied on tape and reel. It is commonly utilized in wireless communication infrastructure and consumer electronics requiring precise RF signal amplification. The operating junction temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 35mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 3V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 1.9dB ~ 3.2dB @ 2GHz |
| Supplier Device Package | 6-SO |
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