UPA800T-A
RF TRANS 2 NPN 10V 8GHZ SOT363Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL UPA800T-A is a dual NPN bipolar RF transistor featuring a 10V collector-emitter breakdown voltage and a 35mA collector current capability. Designed for high-frequency applications, this device boasts a transition frequency of 8GHz, making it suitable for demanding RF circuits. The UPA800T-A offers a typical gain of 7.5dB and a noise figure of 1.9dB at 2GHz, ensuring excellent signal amplification with minimal noise contribution. With a maximum power dissipation of 200mW and an operating temperature up to 150°C, it provides robust performance in challenging environments. The SOT-363 surface mount package facilitates efficient board assembly. This component finds application in wireless communication systems, radar, and other microwave frequency circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 150°C (TJ) |
| Gain | 7.5dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 35mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 3V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 1.9dB @ 2GHz |
| Supplier Device Package | SOT-363 |
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