NESG7030M04-A
RF TRANS NPN 4.3V 5.8GHZ M04Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NESG7030M04-A is an NPN bipolar RF transistor designed for high-frequency applications. This surface-mount component, housed in an M04 (SOT-343F) package, operates with a collector-emitter breakdown voltage of 4.3V and a maximum collector current of 30mA. It exhibits a transition frequency of 5.8GHz, with a typical gain range of 14dB to 21dB. The noise figure is rated between 0.5dB and 0.75dB across the 2GHz to 5.8GHz frequency spectrum. Featuring a maximum power dissipation of 125mW and a minimum DC current gain (hFE) of 200 at 5mA, 2V, this transistor is suitable for demanding RF circuits. It is commonly utilized in wireless infrastructure and communication systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-343F |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 14dB ~ 21dB |
| Power - Max | 125mW |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 4.3V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 5mA, 2V |
| Frequency - Transition | 5.8GHz |
| Noise Figure (dB Typ @ f) | 0.5dB ~ 0.75dB @ 2GHz ~ 5.8GHz |
| Supplier Device Package | M04 |