NE97733-A
RF TRANS PNP 12V 8.5GHZ SOT23Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE97733-A is a PNP bipolar RF transistor designed for high-frequency applications. This component offers a collector-emitter breakdown voltage of 12V and a maximum collector current of 50mA. With a transition frequency of 8.5GHz, it is suitable for demanding RF circuitry. The transistor exhibits a typical gain of 12dB and a noise figure of 1.5dB at 1GHz, making it effective in signal amplification. The NE97733-A features a minimum DC current gain (hFE) of 20 at 20mA and 8V, and a maximum power dissipation of 200mW. It is supplied in a SOT-23-3 surface mount package, compatible with automated assembly processes. This device is utilized in telecommunications, wireless infrastructure, and other high-frequency electronic systems. The operating junction temperature can reach up to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: StripDownload Free CAD Model:
Technical Details:
| Packaging | Strip |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Gain | 12dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 20mA, 8V |
| Frequency - Transition | 8.5GHz |
| Noise Figure (dB Typ @ f) | 1.5dB @ 1GHz |
| Supplier Device Package | SOT-23-3 |
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