NE94433-T1B-A
TRANSISTOR NPN OSC FT=2GHZ SOManufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE94433-T1B-A is an NPN bipolar RF transistor designed for high-frequency applications. This surface-mount component, housed in a SOT-23-3 package, features a collector current capability of 50mA and a collector-emitter breakdown voltage of 15V. With a transition frequency (fT) of 2GHz and a maximum power dissipation of 150mW, it is suitable for RF amplification and oscillation circuits. The device exhibits a minimum DC current gain (hFE) of 50 at 5mA collector current and 10V collector-emitter voltage. This transistor is commonly utilized in wireless communication systems and general-purpose RF designs. The NE94433-T1B-A is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Gain | - |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 10V |
| Frequency - Transition | 2GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | SOT-23-3 |
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