NE94433-T1B
RF TRANS NPN 15V 2GHZ SOT23Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL's NE94433-T1B is an NPN bipolar RF transistor designed for high-frequency applications. This device operates with a collector-emitter breakdown voltage of 15V and a maximum collector current of 50mA, delivering a maximum power dissipation of 150mW. Featuring a transition frequency of 2GHz, the NE94433-T1B is suitable for use in wireless communication systems, mobile infrastructure, and radar applications. It is supplied in a SOT-23-3 surface mount package, presented on tape and reel. The transistor offers a minimum DC current gain (hFE) of 50 at 5mA collector current and 10V collector-emitter voltage. Operating temperature ranges up to 125°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 125°C (TJ) |
| Gain | - |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 10V |
| Frequency - Transition | 2GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | SOT-23-3 |
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