NE856M03-A
RF TRANS NPN 12V 4.5GHZ 3MINMOLDManufacturer: CEL
Categories: Bipolar RF Transistors
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The CEL NE856M03-A is an NPN bipolar RF transistor designed for high-frequency applications. This component features a collector current capability of 100mA and a collector-emitter breakdown voltage of 12V. Its transition frequency reaches 4.5GHz, making it suitable for demanding RF circuitry. With a maximum power dissipation of 125mW, the NE856M03-A offers a typical noise figure ranging from 1.4dB to 2.5dB at 1GHz. The device exhibits a minimum DC current gain (hFE) of 80 at 7mA collector current and 3V collector-emitter voltage. It is supplied in a 3-SuperMiniMold (M03) package, also known as SOT-623F, for surface mounting. This transistor finds application in areas such as wireless communication systems and high-frequency signal amplification. The NE856M03-A is available in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-623F |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 125mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 7mA, 3V |
| Frequency - Transition | 4.5GHz |
| Noise Figure (dB Typ @ f) | 1.4dB ~ 2.5dB @ 1GHz |
| Supplier Device Package | 3-SuperMiniMold (M03) |
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