NE856M02-T1-AZ
RF TRANS NPN 12V 6.5GHZ SOT89Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NPN RF Transistor, Part Number NE856M02-T1-AZ. This surface mount bipolar transistor is designed for high-frequency applications, operating with a collector-emitter breakdown voltage of 12V and a maximum collector current of 100mA. It features a transition frequency of 6.5GHz and provides a typical gain of 12dB. The noise figure is rated at 1.1dB at 1GHz, ensuring low signal distortion. With a maximum power dissipation of 1.2W and an operating temperature up to 150°C, this component is suitable for demanding RF circuits. The SOT-89 (TO-243AA) package is supplied on tape and reel for automated assembly. Applications include wireless communication systems and RF amplification stages.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 12dB |
| Power - Max | 1.2W |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 10V |
| Frequency - Transition | 6.5GHz |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
| Supplier Device Package | SOT-89 |
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