NE856M02-AZ
RF TRANS NPN 12V 6.5GHZ SOT89Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE856M02-AZ is an NPN bipolar RF transistor designed for high-frequency applications. This device features a transition frequency of 6.5GHz and a maximum collector current of 100mA. With a power dissipation capability of 1.2W and a collector-emitter breakdown voltage of 12V, it offers robust performance. The NE856M02-AZ exhibits a typical gain of 12dB and a low noise figure of 1.1dB at 1GHz. It is supplied in a SOT-89 (TO-243AA) surface mount package, suitable for automated assembly. The minimum DC current gain (hFE) is 50 at 20mA and 10V. This component is utilized in various wireless communication systems and other RF circuitry. It operates reliably at junction temperatures up to 150°C and is available in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 12dB |
| Power - Max | 1.2W |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 10V |
| Frequency - Transition | 6.5GHz |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
| Supplier Device Package | SOT-89 |
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