NE85639R-T1
RF TRANS NPN 12V 9GHZ SOT143RManufacturer: CEL
Categories: Bipolar RF Transistors
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The CEL NE85639R-T1 is an NPN bipolar RF transistor designed for high-frequency applications. This component features a collector-emitter breakdown voltage of 12V and a maximum collector current of 100mA. With a transition frequency (fT) of 9GHz and a power dissipation of 200mW, it is suitable for demanding RF circuit designs. The device exhibits a typical gain of 13.5dB and a noise figure ranging from 1.5dB to 2.1dB at 1GHz. Supplied in a SOT-143R surface-mount package, the NE85639R-T1 is available on tape and reel. Its performance characteristics make it a viable choice for applications in wireless communication systems and radio frequency front-end circuitry.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-143R |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 13.5dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 10V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1.5dB ~ 2.1dB @ 1GHz |
| Supplier Device Package | SOT-143R |
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