NE85639-T1-R28-A
RF TRANS NPN 12V 9GHZ SOT143Manufacturer: CEL
Categories: Bipolar RF Transistors
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The CEL NE85639-T1-R28-A is an NPN bipolar RF transistor designed for high-frequency applications. This component offers a collector-emitter breakdown voltage of 12V and a maximum collector current of 100mA, with a power dissipation rating of 200mW. It features a transition frequency of 9GHz and a typical gain of 13dB. The noise figure is specified at 1.1dB at 1GHz. This device is suitable for mounting on a surface, housed in a SOT-143 package (TO-253-4, TO-253AA). It is supplied on tape and reel. This transistor is commonly utilized in wireless communication systems and RF front-end circuitry.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-253-4, TO-253AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 13dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 10V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
| Supplier Device Package | SOT-143 |
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