NE85639-T1-A
SAME AS 2SC4093 NPN SILICON AMPLManufacturer: CEL
Categories: Bipolar RF Transistors
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CEL's NE85639-T1-A is an NPN silicon RF transistor designed for high-frequency amplification. This component features a collector current (Ic) of 100mA and a collector-emitter breakdown voltage of 12V. With a transition frequency (fT) of 7GHz, it delivers a typical gain of 13dB and a low noise figure of 1.1dB at 1GHz. The device operates at a maximum power dissipation of 200mW and is specified for a junction temperature up to 150°C. It is supplied in a SOT-143 surface mount package, specifically TO-253-4, TO-253AA, on tape and reel for automated assembly. This transistor is suitable for applications in mobile communications, satellite receivers, and wireless infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-253-4, TO-253AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 13dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 10V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
| Supplier Device Package | SOT-143 |
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