NE85634-T1-RE-A
RF TRANS NPN 12V 6.5GHZ SOT89Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE85634-T1-RE-A is an NPN bipolar RF transistor designed for demanding high-frequency applications. This surface-mount component, packaged in an SOT-89 (TO-243AA), offers a 12V collector-emitter breakdown voltage and a maximum collector current of 100mA. The transistor exhibits a minimum DC current gain (hFE) of 125 at 20mA and 10V, with a power dissipation capability of 1.2W. Achieving a transition frequency of 6.5GHz, the NE85634-T1-RE-A provides a typical gain of 9dB and a noise figure of 1.1dB at 1GHz. Its robust construction supports operation at junction temperatures up to 150°C. This device is commonly utilized in wireless communication infrastructure and RF power amplification stages.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 9dB |
| Power - Max | 1.2W |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 20mA, 10V |
| Frequency - Transition | 6.5GHz |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
| Supplier Device Package | SOT-89 |
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