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NE85634-T1-A

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NE85634-T1-A

RF TRANS NPN 12V 6.5GHZ SOT89

Manufacturer: CEL

Categories: Bipolar RF Transistors

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The CEL NE85634-T1-A is an NPN bipolar RF transistor designed for high-frequency applications. This SOT-89 packaged device offers a collector-emitter breakdown voltage of 12V and a maximum collector current of 100mA. It exhibits a transition frequency of 6.5GHz and provides a typical gain of 9dB. The transistor features a low noise figure of 1.1dB at 1GHz. With a maximum power dissipation of 2W and an operating temperature up to 150°C, it is suitable for demanding applications. This component is commonly utilized in wireless communication systems, satellite communications, and radar systems. The NE85634-T1-A is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain9dB
Power - Max2W
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)12V
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 20mA, 10V
Frequency - Transition6.5GHz
Noise Figure (dB Typ @ f)1.1dB @ 1GHz
Supplier Device PackageSOT-89

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