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NE85634-T1

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NE85634-T1

RF TRANS NPN 12V 6.5GHZ SOT89

Manufacturer: CEL

Categories: Bipolar RF Transistors

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The CEL NE85634-T1 is a high-performance NPN bipolar RF transistor designed for demanding wireless applications. This SOT-89 packaged device offers a collector-emitter breakdown voltage of 12V and a maximum collector current of 100mA. It achieves a transition frequency of 6.5GHz and a power dissipation of up to 2W, making it suitable for RF amplification and switching in cellular infrastructure, satellite communications, and test and measurement equipment. Notable specifications include a typical noise figure of 1.4dB at 1GHz and a minimum DC current gain (hFE) of 50 at 20mA and 10V. The transistor operates at an elevated temperature of 150°C (TJ) and is supplied in tape and reel packaging for automated assembly.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain-
Power - Max2W
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)12V
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 20mA, 10V
Frequency - Transition6.5GHz
Noise Figure (dB Typ @ f)1.4dB @ 1GHz
Supplier Device PackageSOT-89

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