NE85634-A
RF TRANS NPN 12V 6.5GHZ SOT89Manufacturer: CEL
Categories: Bipolar RF Transistors
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The CEL NE85634-A is an NPN bipolar RF transistor designed for high-frequency applications. With a collector-emitter breakdown voltage of 12V and a maximum collector current of 100mA, this device offers a transition frequency of 6.5GHz. It provides a typical gain of 9dB and a low noise figure of 1.1dB at 1GHz, making it suitable for demanding RF front-end stages. The transistor features a minimum DC current gain (hFE) of 50 at 20mA and 10V. Packaged in a surface-mount SOT-89 (TO-243AA) for efficient assembly, the NE85634-A operates at a maximum power dissipation of 2W and can withstand junction temperatures up to 150°C. This component is commonly utilized in wireless communication systems, satellite receivers, and radar applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 9dB |
| Power - Max | 2W |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 10V |
| Frequency - Transition | 6.5GHz |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
| Supplier Device Package | SOT-89 |
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