NE85633L-A
RF TRANS NPN 12V 7GHZ SOT23Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE85633L-A is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount component, housed in a SOT-23-3 package, offers a collector-emitter breakdown voltage of 12V and a maximum collector current of 100mA. It features a transition frequency of 7GHz and a typical gain of 9dB. The noise figure is rated at 1.4dB to 2dB at 1GHz, making it suitable for low-noise amplification stages. With a maximum power dissipation of 200mW and an operating temperature up to 150°C, the NE85633L-A is utilized in wireless infrastructure, satellite communications, and radar systems. The minimum DC current gain (hFE) is 50 at 20mA collector current and 10V collector-emitter voltage.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 9dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 10V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1.4dB ~ 2dB @ 1GHz |
| Supplier Device Package | SOT-23-3 |
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