NE85633-T1B-R25-A
SAME AS 2SC3356 NPN SILICON AMPLManufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE85633-T1B-R25-A is an NPN silicon RF transistor designed for high-frequency amplification. This bipolar device features a collector current rating of 100mA and a collector-emitter breakdown voltage of 12V. With a transition frequency of 7GHz and a typical gain of 11.5dB, it is suitable for demanding RF applications. The noise figure is specified at 1.1dB at 1GHz. Engineered for surface mounting in a 3-MINIMOLD package (TO-236-3, SC-59, SOT-23-3), this component operates at a maximum power of 200mW and can withstand junction temperatures up to 150°C. The DC current gain (hFE) is a minimum of 50 at 20mA and 10V. This transistor is commonly utilized in wireless communication systems and other high-frequency electronic designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 11.5dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 10V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
| Supplier Device Package | 3-MINIMOLD |
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