NE85633-T1B-R24-A
RF TRANS NPN 12V 7GHZ SOT23Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NPN RF Transistor, part number NE85633-T1B-R24-A, is a high-performance component designed for demanding RF applications. This surface mount device, housed in a SOT-23-3 package, offers a 12V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 7GHz and a typical gain of 11.5dB, it excels in high-frequency amplification stages. The device features a low noise figure of 1.1dB at 1GHz, making it suitable for sensitive receiver front-ends. Its robust construction supports an operating temperature up to 150°C (TJ) and a maximum power dissipation of 200mW. This transistor is commonly utilized in wireless communication infrastructure, satellite systems, and broadband networking equipment. The NE85633-T1B-R24-A is supplied on tape and reel for automated assembly processes.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 11.5dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 20mA, 10V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
| Supplier Device Package | SOT-23-3 |
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