NE85633-T1B-A
SAME AS 2SC3356 NPN SILICON AMPLManufacturer: CEL
Categories: Bipolar RF Transistors
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The CEL NE85633-T1B-A is an NPN silicon RF transistor designed for high-frequency applications. This bipolar RF transistor features a 12V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 7GHz, it offers a typical gain of 11.5dB and a noise figure of 1.1dB at 1GHz, making it suitable for demanding amplification circuits. The device is rated for a maximum power dissipation of 200mW and operates at temperatures up to 150°C. Packaged in a compact 3-MINIMOLD (TO-236-3, SC-59, SOT-23-3) with Tape & Reel (TR) for automated assembly, the NE85633-T1B-A finds utility in various wireless communication systems and high-frequency electronic designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 11.5dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 10V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
| Supplier Device Package | 3-MINIMOLD |
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