NE85633-T1B
RF TRANS NPN 12V 7GHZ SOT23Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE85633-T1B is an NPN bipolar RF transistor designed for high-frequency applications. This SOT-23-3 packaged device offers a 12V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 7GHz and a typical gain of 9dB, it is suitable for demanding RF circuits. The NE85633-T1B exhibits a low noise figure, typically between 1.4dB and 2dB at 1GHz, making it ideal for amplifier stages. Its maximum power dissipation is 200mW, and it operates across a wide temperature range up to 150°C. This component finds application in wireless communications, satellite systems, and other advanced electronic designs requiring efficient RF amplification.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 9dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 10V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1.4dB ~ 2dB @ 1GHz |
| Supplier Device Package | SOT-23-3 |
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