NE85633-R25-A
RF TRANS NPN 12V 7GHZ SOT23Manufacturer: CEL
Categories: Bipolar RF Transistors
Quality Control: Learn More
CEL NE85633-R25-A is an NPN bipolar RF transistor designed for high-frequency applications. This device features a collector-emitter breakdown voltage of 12V and a maximum collector current of 100mA. With a transition frequency of 7GHz and a typical gain of 11.5dB, it is suitable for demanding RF circuitry. The minimum DC current gain (hFE) is 125 at 20mA and 10V. The NE85633-R25-A exhibits a low noise figure of 1.1dB at 1GHz, making it ideal for sensitive receiver front-ends. It is packaged in a compact SOT-23-3 (TO-236-3, SC-59) surface-mount configuration, allowing for efficient board space utilization. This component operates at a maximum power dissipation of 200mW and can withstand junction temperatures up to 150°C. Its performance characteristics lend themselves to use in wireless communication systems, radar applications, and other RF front-end modules.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 11.5dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 20mA, 10V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
| Supplier Device Package | SOT-23-3 |
Request a Quote
Clients Also Buy
NE68133-A
RF TRANS NPN 10V 9GHZ SOT23
NE68719-T1
RF TRANS NPN 3V 11GHZ 3SMINMOLD
NE851M13-T3-A
TRANS NPN LOW PRO M13 SMD
