NE85633-R23-A
RF TRANS NPN 12V 7GHZ SOT23Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE85633-R23-A is a high-frequency NPN bipolar RF transistor designed for demanding applications. This surface-mount device, packaged in an SOT-23-3, offers a collector current of 100mA and a maximum collector-emitter breakdown voltage of 12V. It features a transition frequency of 7GHz and provides a typical gain of 11.5dB at 1GHz, with a low noise figure of 1.1dB at the same frequency. The device's DC current gain (hFE) is a minimum of 50 at 20mA and 10V. With a maximum power dissipation of 200mW and an operating junction temperature of 150°C, the NE85633-R23-A is suitable for use in wireless communication systems, cellular infrastructure, and other RF front-end circuitry.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 11.5dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 10V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
| Supplier Device Package | SOT-23-3 |
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