NE85633-A
RF TRANS NPN 12V 7GHZ SOT23Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE85633-A is an NPN bipolar RF transistor designed for high-frequency applications. This component features a collector-emitter breakdown voltage of 12V and a maximum collector current of 100mA. With a transition frequency of 7GHz and a typical gain of 11.5dB, it is well-suited for RF amplification stages. The device exhibits a low noise figure of 1.1dB at 1GHz, making it valuable in noise-sensitive circuits. The NE85633-A operates at a maximum power dissipation of 200mW and can withstand junction temperatures up to 150°C. Packaged in a SOT-23-3 (TO-236-3, SC-59) surface-mount case, this transistor finds application in wireless communications, radar systems, and general RF circuitry.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: StripDownload Free CAD Model:
Technical Details:
| Packaging | Strip |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | - |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 11.5dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 10V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
| Supplier Device Package | - |
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