NE85630-T1-R25-A
RF TRANS NPN 12V 4.5GHZ SOT323Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NPN RF Transistor, part number NE85630-T1-R25-A, is a high-performance component designed for demanding RF applications. This device offers a 12V collector-emitter breakdown voltage and a maximum collector current of 100mA, with a typical DC current gain (hFE) of 125 at 7mA and 3V. Operating up to a transition frequency of 4.5GHz, it provides a nominal gain of 9dB and a low noise figure of 1.2dB at 1GHz. The NE85630-T1-R25-A is rated for a maximum power dissipation of 150mW and features a surface mountable SOT-323 (SC-70) package. It is supplied in a Tape & Reel (TR) for automated assembly and is suitable for operation at temperatures up to 150°C (TJ). This transistor finds application in wireless communication systems and other high-frequency circuitry.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 9dB |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 7mA, 3V |
| Frequency - Transition | 4.5GHz |
| Noise Figure (dB Typ @ f) | 1.2dB @ 1GHz |
| Supplier Device Package | SOT-323 |
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