NE85630-T1
RF TRANS NPN 12V 4.5GHZ SOT323Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE85630-T1 is an NPN bipolar RF transistor designed for high-frequency applications. This SOT-323 packaged device offers a collector-emitter breakdown voltage of 12V and a maximum collector current of 100mA. With a transition frequency of 4.5GHz and a power dissipation of 150mW, it is suitable for demanding RF circuits. The NE85630-T1 exhibits a typical gain range of 6dB to 12dB and a noise figure between 1.3dB and 2.2dB across the 1GHz to 2GHz frequency spectrum. It features a minimum DC current gain (hFE) of 40 at 7mA and 3V. This component is commonly utilized in wireless communications infrastructure and consumer electronics. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 6dB ~ 12dB |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 7mA, 3V |
| Frequency - Transition | 4.5GHz |
| Noise Figure (dB Typ @ f) | 1.3dB ~ 2.2dB @ 1GHz ~ 2GHz |
| Supplier Device Package | SOT-323 |
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