NE85630-R25-A
RF TRANS NPN 12V 4.5GHZ SOT323Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NPN RF Transistor, part number NE85630-R25-A, is a high-performance component designed for demanding RF applications. This SOT-323 packaged transistor offers a collector-emitter breakdown voltage of 12V and a maximum collector current of 100mA. It features a transition frequency of 4.5GHz, a typical gain of 9dB, and a low noise figure of 1.2dB at 1GHz, making it suitable for signal amplification stages. The device dissipates a maximum power of 150mW and can operate at junction temperatures up to 150°C. Its surface mount configuration simplifies integration into compact circuit designs. This transistor is commonly utilized in wireless communication systems, satellite receivers, and radar equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 9dB |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 7mA, 3V |
| Frequency - Transition | 4.5GHz |
| Noise Figure (dB Typ @ f) | 1.2dB @ 1GHz |
| Supplier Device Package | SOT-323 |
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