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NE85630-R24-A

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NE85630-R24-A

RF TRANS NPN 12V 4.5GHZ SOT323

Manufacturer: CEL

Categories: Bipolar RF Transistors

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CEL NE85630-R24-A is an NPN bipolar RF transistor designed for high-frequency applications. This surface-mount device, housed in a SOT-323 package, operates with a collector-emitter breakdown voltage of 12V and a maximum collector current of 100mA. It features a transition frequency of 4.5GHz and provides a typical gain of 9dB. The noise figure is rated at 1.2dB at 1GHz. With a maximum power dissipation of 150mW and an operating junction temperature of 150°C, this component is suitable for use in wireless communications, satellite receiver front-ends, and other demanding RF circuits. The DC current gain (hFE) is a minimum of 70 at 7mA and 3V.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain9dB
Power - Max150mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)12V
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 7mA, 3V
Frequency - Transition4.5GHz
Noise Figure (dB Typ @ f)1.2dB @ 1GHz
Supplier Device PackageSOT-323

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