NE85630-A
RF TRANS NPN 12V 4.5GHZ SOT323Manufacturer: CEL
Categories: Bipolar RF Transistors
Quality Control: Learn More
CEL NE85630-A is an NPN bipolar RF transistor designed for high-frequency applications. This component offers a 12V collector-emitter breakdown voltage and a maximum collector current of 100mA, with a typical DC current gain (hFE) of 40 at 7mA and 3V. The transistor operates up to 4.5GHz, featuring a gain of 9dB and a low noise figure of 1.2dB at 1GHz. Its maximum power dissipation is 150mW, and it operates at temperatures up to 150°C (TJ). The NE85630-A is supplied in a compact SOT-323 (SC-70) surface-mount package, suitable for automated assembly. This device finds application in wireless communication systems, including cellular infrastructure, satellite communications, and broadband wireless access.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 9dB |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 7mA, 3V |
| Frequency - Transition | 4.5GHz |
| Noise Figure (dB Typ @ f) | 1.2dB @ 1GHz |
| Supplier Device Package | SOT-323 |
Request a Quote
Clients Also Buy
NE67818-A
RF TRANS NPN 6V 12GHZ SOT343
NE85634-A
RF TRANS NPN 12V 6.5GHZ SOT89
NE677M04-A
RF TRANS NPN 6V 15GHZ SOT343F
