NE85619-T1-A
SAME AS 2SC5006 NPN SILICON AMPLManufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE85619-T1-A is an NPN Silicon RF Transistor designed for high-frequency applications. This component operates with a maximum collector current (Ic) of 100mA and a collector-emitter breakdown voltage of 12V. It features a transition frequency of 4.5GHz and a typical gain of 9dB. The transistor exhibits a minimum DC current gain (hFE) of 80 at 7mA and 3V. With a noise figure of 1.2dB at 1GHz, it is suitable for demanding RF amplification stages. The device is rated for a maximum power dissipation of 125mW and an operating junction temperature of 150°C. Packaged in a SOT-523 surface mount configuration and supplied on tape and reel, the NE85619-T1-A is utilized in areas such as wireless communications and RF front-end modules.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-523 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 9dB |
| Power - Max | 125mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 7mA, 3V |
| Frequency - Transition | 4.5GHz |
| Noise Figure (dB Typ @ f) | 1.2dB @ 1GHz |
| Supplier Device Package | SOT-523 |
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