NE85619-T1
RF TRANS NPN 12V 4.5GHZ SOT523Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE85619-T1 is an NPN bipolar RF transistor designed for high-frequency applications. This surface-mount device, packaged in a SOT-523, operates at up to 4.5GHz. It features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 12V. The NE85619-T1 offers a minimum DC current gain (hFE) of 80 at 20mA and 10V. Typical gain ranges from 6.5dB to 12.5dB, with a noise figure between 1.4dB and 2.2dB across the 1GHz to 2GHz frequency range. The transistor can dissipate up to 100mW and is rated for operation at temperatures up to 150°C (TJ). This component is commonly utilized in wireless infrastructure, satellite communications, and radar systems. The NE85619-T1 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-523 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 6.5dB ~ 12.5dB |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 20mA, 10V |
| Frequency - Transition | 4.5GHz |
| Noise Figure (dB Typ @ f) | 1.4dB ~ 2.2dB @ 1GHz ~ 2GHz |
| Supplier Device Package | SOT-523 |
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