NE85619-A
RF TRANS NPN 12V 4.5GHZ SOT523Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE85619-A is an NPN bipolar RF transistor designed for high-frequency applications. This device features a 12V collector-emitter breakdown voltage and a maximum collector current of 100mA, with a typical DC current gain (hFE) of 80 at 7mA and 3V. It operates at a transition frequency of 4.5GHz and provides a gain of 9dB. The noise figure is rated at a typical 1.2dB at 1GHz. Engineered for demanding environments, it can operate at junction temperatures up to 150°C. The compact SOT-523 surface mount package is ideal for space-constrained designs. This component is commonly utilized in wireless communication systems, cellular infrastructure, and point-to-point radio applications. Supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-523 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 9dB |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 7mA, 3V |
| Frequency - Transition | 4.5GHz |
| Noise Figure (dB Typ @ f) | 1.2dB @ 1GHz |
| Supplier Device Package | SOT-523 |
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